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Indium phosphide substrates, <100>, semi insulating, contains iron as dopant, diam. × thickness 50.5 mm × 350 μm

Code: I 9193

Synonyms: Inp single crystal substrate

Semi insulating

InP

28480090

145.79

Bottle / Drum
18%
Semi insulating

InP

28480090

145.79

Bottle / Drum

18%
PackingsPrice (INR)
1 pc 96039.00
Custom size POR
Packings
Enquire
Properties
<100>

± 0.5°

10~7 - 10~8 Ω cm (or larger)

50.5 mm

± 0.4 mm

350 μm

± 25 μm

Single side polished with roughness

None

Iron

< 15 μm

< 30000 cm-2


Description

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Application

I 9193 (OTTO) Indium phosphide substrates, <100>, semi insulating, contains iron as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Safety Information

RIDADR NONH for all modes of transport


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 96039.00
Custom size POR