Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Quartz substrates (Dimension: ~ 3” × 1” × 1.1 mm)
Barium fluoride window diam. x thick 35 mm x 5 mm
22398-80-7
Indium phosphide substrates, <100>, semi insulating, contains iron as dopant, diam. × thickness 50.5 mm × 350 μm
1303-00-0
Gallium arsenide (single crystal substrate), (100) ± 0.5o
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