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Gallium arsenide (single crystal substrate), (111)B ± 0.5o

Code: GAW 099

Epi-ready

GaAs

28429090

144.64

Bottle / Drum
18%

Epi-ready

GaAs

28429090

144.64

Bottle / Drum

18%
PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR
Packings
Enquire
Properties
(111)B ± 0.5o n-type doping

0.01 - 0.1 ohm.cm

2” (50.8 mm ± 0.4mm)

300 – 400 micron

one side polished

Ra < 15 Å

Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Application

Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR