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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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Plano convex lens, dia 50.8 mm, focal length 10 cm
Barium fluoride window diam. x thick 35 mm x 5 mm
Potassium Bromide Window (25mm Dia. x 5mm Thick)
Zinc selenide optical windows, 125 mm dia. x 15 mm thick
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