Indium phosphide substrates, <100>, semi insulating, contains iron as dopant, diam. × thickness 50.5 mm × 350 μm
: Inp single crystal substrate
: Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
: I 9193 (OTTO) Indium phosphide substrates, <100>, semi insulating, contains iron as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Properties
: 10~7 - 10~8 Ω cm (or larger)
: Single side polished with roughness
Safety Information
RIDADR NONH for all modes of transport
WGK Germany 3
| Packings | Price (INR) |
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1 pc
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96039.00
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Custom size
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POR
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