can't read?
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.TTV (um) - <10Surface Finish - Epi ReadyPacking = Individually Packed in inert atmosphere
GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
Plane optical window, 180 mm dia, 8 mm thick
Sapphire wafers, <100>, dia. x thickness 100 mm x 0.5 mm
Laser Line Clean-Up Filters, Wavelength 532 nm
7440-21-3
Silicon wafer, single crystal, single side polished, <100>, dia x thickness 100 mm x 500 μm
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.