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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.TTV (um) - <10Surface Finish - Epi ReadyPacking = Individually Packed in inert atmosphere
GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Plano Convex Spherical Lens, Focal Length : 100mm
Plano Convex Lens, Dia 25 mm, Focal Length 100 mm
7440-21-3
Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
Barium fluoride window diam. x thick 44.45 mm x 3.5 mm
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