Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm
: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.
TTV (um) - <10
Surface Finish - Epi Ready
Packing = Individually Packed in inert atmosphere
: GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
Properties
: Individual tray, sealed in inert atmosphere
Safety Information
RIDADR UN 1557 6.1 / PGII
WGK Germany 3
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1 pc
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POR
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10 pc
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POR
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1000 pcs
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POR
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