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Certificate of Analysis

Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm

Code: GAS 369

(For eg. B 1615-0108)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.


TTV (um) - <10
Surface Finish - Epi Ready

Packing = Individually Packed in inert atmosphere

GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.