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Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.
SS 087 (OTTO) Silicon substrate, single side polished, <111>, P-type, contains boron as dopant, diam. × thickness 50 mm × 1 mm Cas7440-21-3 - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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SI wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
Plano Convex Lens, Dia 25 mm, Focal Length 30 mm
Half wave plate (Diameter: 12.7mm, Coating: AR/ AR, R<0.25%@532nm)
Silicon wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 100 nm SiO2 layer on Si (100)]
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.