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Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm

Code: SSC 855

Prime Grade

Si

9002

28.09

Bottle / Drum
18%

Prime Grade

Si

9002

28.09

Bottle / Drum

18%
PackingsPrice (INR)
1 pc 9999.00
10 pc 63099.00
100 pcs POR
Packings
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Properties
2 inch

± 1%

0.5 mm (500 μm)

± 20 μm

<111>

<0.5°

P-type, contains boron as dopant

Single Side Polished

< 50 Ω·cm

< 0.5 nm

< 30 μm

Description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

SSC 855 - Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

Safety Information

WGK Germany 2

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 9999.00
10 pc 63099.00
100 pcs POR