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Specification Sheet

Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. x thickness 2 in. x 0.5 mm

: SSC 855

: Prime Grade

: Si

: 28.09

: Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

: SSC 855 - Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: 2 inch

: ± 1%

: 0.5 mm (500 μm)

: ± 20 μm

: <111>

: <0.5°

: P-type, contains boron as dopant

: Single Side Polished

: < 50 Ω·cm

: < 0.5 nm

: < 30 μm


Safety Information

WGK Germany 2


PackingsPrice (INR)
1 pc 9999.00
10 pc 63099.00
100 pcs POR