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Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.
SSC 855 - Silicon wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 2 in. x 0.5 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Plano Convex Spherical Lens, Dia 25.4mm, Focal Length 30mm, AR @ 880 nm
Cerium doped YAG (Ce:YAG) single crystal, Dimensions 50 mm x 50 mm, thick 0.5 mm
1303-00-0
Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm
KRS-5 (Thallium-Bromoiodide) Window, (50.8 mm Dia. x 3 mm Thick)
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.