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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Quartz substrate, thickness 1.0 mm, size 15 × 15 mm
7440-21-3
Silicon substrate (single side polished), <100>, P-type, diam. × thickness 2 in. × 300 - 400 μm
ZnSe Optical Windows, (59 mm Dia. x 3 mm Thick)
Barium fluoride window diam. x thick 44.45 mm x 3.5 mm
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