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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Germanium single crystal, 50 mm dia, 50 mm length (N type)
Plano Convex Lens, Dia 50 mm, Focal Length 200 mm
Plano Convex Spherical Lens, Dia 25.4mm, Focal Length 75mm, AR @ 880 nm
Gold mirror, (L x W x thickness 25 mm x 25 mm x 6 mm)
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