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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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Plano Convex Spherical Lens, Dia 50.8mm, Focal Length 200mm
7440-21-3
Silicon optical (mono crystalline) windows, 25 mm dia, 3 mm thick, 99.999%
SI wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm
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