Gallium arsenide wafers, p-TYPE, dia 76.2mm, thick 500 µm, <100>

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.

Packing = Individually Packed in inert atmosphere

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.