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Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 006 (otto) Silicon wafer (single substrase), <100>, p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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12002-99-2
Silver(I) telluride
2172-02-3
Hafnium tert-butoxide, 99.9%+
7440-21-3
Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm
5970-45-6
Zinc acetate, ≥99%
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.