Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 006 (otto) Silicon wafer (single substrase), <100>, p-type, contains Boron (B) as dopant, diam. x thickness 100 mm x 0.525 mm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.