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Silicon wafer (single side polished), <100>, N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm

Code: SSC 180

Si

9002

28.09

Bottle / Drum
18%

Si

9002

28.09

Bottle / Drum

18%
PackingsPrice (INR)
1 pc 9603.00
10 pc 86049.00
100 pc POR
Packings
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Properties
50.8 mm

± 0.4 mm

280 μm

± 25 μm

<100>

± 0.5°

N (Phosphorous doped)

< 10 μm

< 30 μm

< 1 Ohm-cm

Etched

< 1 nm

< 1 μm

Description

Silicon wafers / substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

SSC 180 - Silicon wafer (single side polished), <100>, N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

Safety Information

WGK Germany 2

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 9603.00
10 pc 86049.00
100 pc POR