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Specification Sheet

Silicon wafer (single side polished), <100>, N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm

: SSC 180

: Si

: 28.09

: Silicon wafers / substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

: SSC 180 - Silicon wafer (single side polished), <100>, N (Phosphorous doped), diam. x thickness 50.8 mm x 280 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: 50.8 mm

: ± 0.4 mm

: 280 μm

: ± 25 μm

: <100>

: ± 0.5°

: N (Phosphorous doped)

: < 10 μm

: < 30 μm

: < 1 Ohm-cm

: Etched

: < 1 nm

: < 1 μm


Safety Information

WGK Germany 2


PackingsPrice (INR)
1 pc 9603.00
10 pc 86049.00
100 pc POR