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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.TTV (um) - <10Surface Finish - Epi ReadyPacking = Individually Packed in inert atmosphere
GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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BK7 glass substrates, 50 mm dia, 1 mm thick
7440-56-4
Germanium optical (mono crystalline) windows, 35 mm dia, 15 mm thick, 99.999%
Nd:YAG Laser Rods [Doping Concentration 1.1 % Doping of Nd +3]
Calcium fluoride window diam. x thick 10 mm x 1.5 mm
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