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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Dielectric Beam Splitter, dia 100 mm, thick 15 mm
Notch filter, 532 nm, 25.4 mm
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7440-21-3
Silicon optical (mono crystalline) windows, 40 mm dia, 10 mm thick, 99.999%
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