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Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm

Code: I 9156

Synonyms: Inp single crystal substrate

Epi-ready

InP

28480090

145.79

Bottle / Drum
18%
Epi-ready

InP

28480090

145.79

Bottle / Drum

18%
PackingsPrice (INR)
1 pc 96039.00
Custom size POR
Packings
Enquire
Properties
<100>

± 0.5°

N type

50.5 mm

± 0.4 mm

350 μm

± 25 μm

Single side polished with roughness

None

Sulphur

< 15 μm

< 30000 cm-2


Description

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Application

I 9156 (OTTO) Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Safety Information

RIDADR NONH for all modes of transport


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 96039.00
Custom size POR