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Specification Sheet

Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm

: Inp single crystal substrate

: I 9156

: Epi-ready

: InP

: 145.79

: Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

: I 9156 (OTTO) Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.


Properties

: <100>

: ± 0.5°

: N type

: 50.5 mm

: ± 0.4 mm

: 350 μm

: ± 25 μm

: Single side polished with roughness

: None

: Sulphur

: < 15 μm

: < 30000 cm-2

:


Safety Information

RIDADR NONH for all modes of transport
WGK Germany 3


PackingsPrice (INR)
1 pc 96039.00
Custom size POR