Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm
: Inp single crystal substrate
: Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
: I 9156 (OTTO) Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Properties
: Single side polished with roughness
Safety Information
RIDADR NONH for all modes of transport
WGK Germany 3
Packings | Price (INR) |
1 pc
|
96039.00
|
Custom size
|
POR
|