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Specification Sheet

Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm

: SSW 009

: PRIME

: Si

: 28.09

: Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

: SSW 009 (otto) Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: Silion

: <100>

: ±0.5°

: 100 mm

: ± 0.3 mm

: 525μm (0.525 mm)

: ± 25 μm

: Phosphorus as dopant

: N-Type

: 1-2 Ωcm

: Single Side Polished

: 2, SEMI-Std

: <10 μm

: <30 μm

: <15

: CZ


Safety Information

WGK Germany 2
RTECS VW0400000


PackingsPrice (INR)
1 pc 9369.00
10 pc 86409.00
Custom size POR