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Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 009 (otto) Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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137829-79-9
Pyrromethene 597
12008-29-6
Boron silicide, 200 mesh, 98%
Carbon felt, 3.18mm thick, 99%
Stainless steel - AISI 304, Fe/Cr18%/Ni 10%, plate, thickness 4.2 mm, size 1220 × 610 mm, temper annealed
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.