Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm
: Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
: SSCE 009 (OTTO) Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm - used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices.
Properties
Safety Information
Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves
WGK Germany 3
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1 pc
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10 pc
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Custom size
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