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Synonyms: 4H-SiC Epitaxial Wafer
Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
SSCE 009 (OTTO) Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm - used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices.
Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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12537-81-4
Titanium aluminium carbide 211, ≥80%, ≤40 μm particle size
7440-33-7
Tungsten sputtering target, diam. x thickness 4 inch x 4 mm, 99.99%
1327-50-0
Antimony(III) telluride, 99.99%
7440-21-3
Silicon wafer (single substrase), <111>, p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.