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Specification Sheet

Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm

: S 6075

: PRIME

: Si

: Double side polished

: 28.09

: Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

: S 6075 (OTTO) Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: 4 inch

: ± 1%

: 525 μm

: ± 1%

: Single side

: P-type

: <100>

: ± 0.5°

: >200 ohm.cm

: Boron as dopant

: < 0.8 nm


Safety Information

WGK Germany 2


PackingsPrice (INR)
1 pc 19809.00
10 pc POR
Custom size POR