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Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm

Code: SSW 009

PRIME

Si

9001 / 9002

28.09

Container / Standard Cassettes
18%

PRIME

Si

9001 / 9002

28.09

Container / Standard Cassettes

18%
PackingsPrice (INR)
1 pc 9369.00
10 pc 86409.00
Custom size POR
Packings
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Properties
Silion

<100>

±0.5°

100 mm

± 0.3 mm

525μm (0.525 mm)

± 25 μm

Phosphorus as dopant

N-Type

1-2 Ωcm

Single Side Polished

2, SEMI-Std

<10 μm

<30 μm

<15

CZ

Description

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

Application

SSW 009 (otto) Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

Safety Information

WGK Germany 2


RTECS VW0400000

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 9369.00
10 pc 86409.00
Custom size POR