can't read?
Synonyms: 4H-SiC Epitaxial Wafer
Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
SSCE 009 (OTTO) Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm - used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices.
Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
CrSi 91.1/8.9at% target, 50.8 mm dia. x 5 mm thick, 99.9% (Indium bonded to 1 mm thick copper backing plate)
G 5679
409-21-2
Silicone carbide, ingot, N-type, diam. x thickness 2 in. x 10 mm
YBCO disk, dia 44 mm, thick 14 mm
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.