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Micro/Nanoelectronics

Micro/Nanoelectronics


Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller.

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively.

Otto Chemie Pvt Ltd - Manufacturers of Micro/Nanoelectronics compounds in India.

Micro/Nanoelectronics

1 to 50 of 60 item(s) displayed

Code Product Name CAS No. MSDS Pricing
A 1932 Allylpalladium(II) chloride dimer, 98% 12012-95-2 View
B 0521 Boron silicide, 200 mesh, 98% 12008-29-6 View
B 0669 Bismuth(III) selenide, - 350 mesh, 99.99% 12068-69-8 View
B 1008 Boric acid, 99.97% 10043-35-3 View
B 1327 Barium magnesium aluminate, europium doped, 99% 724792-82-9 View
B 1963 Boric acid, 99.9995% 10043-35-3 View
B 1966 meta-Boric acid, 99% 13460-50-9 View
B 1968 Boric acid, 99.999% 10043-35-3 View
C 1787 Cerium magnesium aluminate, terbium doped, 99% 106495-57-2 View
C 7956 Cobalt(III) acetylacetonate, 98% 21679-46-9 View
D 0156 2-(Dodecylthiocarbonothioylthio)-2-methylpropionic acid, 98% (HPLC) 461642-78-4 View
D 0961 6,13-Diphenylpentacene, 98% 76727-11-2 View
D 2420 1-Dodecanethiol, 98% 112-55-0 View
D 6052 Dichlorodiphenylsilane, 97% 80-10-4 View
F 1436 Fluosilicic acid 16961-83-4 View
H 0172 Hexylphosphonic acid, 95% 4721-24-8 View
H 1392a 1-Hexanethiol, 97% 111-31-9 View
H 3042 Hafnium tert-butoxide, 99% 2172-02-3 View
H 3124 Hafnium tert-butoxide, 99.9%+ 2172-02-3 View
H 5811 Hexamethyldisilane, 98% 1450-14-2 View
M 0138 Methyltrimethoxysilane, 98% 1185-55-3 View
M 3330 (3-Mercaptopropyl) trimethoxysilane, 95% 4420-74-0 View
M 5740 Molybdenum disulphide, ~6 μm, 99% 1317-33-5 View
N 0891 Niobium diselenide, ≥99.9% 12034-77-4 View
N 6825 Niobium boride, 99% 12007-29-3 View
O 0126 Octadecylphosphonic acid, 97% 4724-47-4 View
O 1334 Orthophosphoric acid, 85 wt.% in H2O, 99.99% trace metals basis 7664-38-2 View
P 0496 Poly(acrylic acid, sodium salt) solution, average Mw ~1,200, 45 wt.% in H2O 9003-04-7 View
P 0500 Poly(acrylic acid, sodium salt) solution, average Mw ~8,000, 45 wt.% in H2O 9003-04-7 View
P 0501 Poly(acrylic acid, sodium salt) solution, average Mw ~15,000, 35 wt.% in H2O 9003-04-7 View
P 0987 PSS-[3-(2-Aminoethyl)amino]propyl-Heptaisobutyl substituted 444315-16-6 View
P 2145 Potassium tert-butoxide, puriss, 98% 865-47-4 View
P 3015 Poly(dimethylsiloxane), hydroxy terminated viscosity ~750 cSt 70131-67-8 View
P 3201 Poly(dimethylsiloxane), hydroxy terminated average Mn ~550, viscosity ~25 cSt 70131-67-8 View
P 3224 Poly(dimethylsiloxane), hydroxy terminated viscosity ~65 cSt 70131-67-8 View
P 3947 Poly(dimethylsiloxane), hydroxy terminated average Mn ~110,000, viscosity ~50,000 cSt 70131-67-8 View
P 5065 Polycarbomethylsilane, average Mw ~1500-2000 62306-27-8 View
P 5066 Polycarbomethylsilane, average Mw ~1500-2200 62306-27-8 View
P 5067 Polycarbomethylsilane, average Mw ~1500-2500 62306-27-8 View
P 5454 Poly(dimethylsilylene) 28883-63-8 View
P 6509 Poly(ethylene glycol) methyl ether methacrylate, average Mn 500 26915-72-0 View
P 6511 Poly(ethylene glycol) methyl ether methacrylate, average Mn 950 26915-72-0 View
P 7703 Phosphoric acid crystalline, ≥99.999% trace metals basis 7664-38-2 View
P 7709 Poly(dimethylsiloxane), hydroxy terminated viscosity ~10000-15000 cSt 70131-67-8 View
R 0601 Ruthenium(IV) oxide hydrate, 99.99% 32740-79-7 View
S 2505 Stannic oxide, 99% 18282-10-5 View
S 2517 Stannic oxide, GR 99%+ 18282-10-5 View
S 3209 Sodium phenoxide, 98% 139-02-6 View
S 6841 Stannic oxide, 99.9% 18282-10-5 View
T 0324 Triethoxymethylsilane, 99% 2031-67-6 View

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Not for medical, household or any other uses, for lab use only, Please test before use.