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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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Penta Prism, Thickness 50 mm
7440-21-3
Silicon window, 199 mm dia, 12 mm thick
Laser Line Clean-Up Filters, Wavelength 785 nm
Barium fluoride window diam. x thick 15 mm x 2 mm
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