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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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Zero Order Quarter Wave Retardation Plate, Dia 50 mm, Thick 6 mm
Fused silica wafers dia 100 mm thick 0.5 mm
Plano convex lens, dia 50.8 mm, focal length 7.5 cm
Plano Convex Lens, Dia 25.4 mm, Focal Length 50 mm
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