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Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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SOI wafers, 6 Inch, Dia 150 mm, P-type, Boron Doped
Zero Order Half Wave Retardation Plate, Dia 50 mm, Thick 6 mm
1303-00-0
Gallium arsenide (single crystal substrate), (111)B ± 0.5o
Nd:YAG Laser Rods, Doping Concentration 0.6 at%
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.