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Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.
S 0243 (OTTO) Silicon sputtering target, diam. × thickness 50 mm × 6 mm, 99.99% - used for the production of the silicon, sputtering is widely used to produce a back reflector layer (made predominantly with aluminum) and front contacts (made with transparent conducting oxides, TCO).
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Stellitee 21 powder, 53-150 µm
7439-94-3
Lutetium sputtering target, diam. x thickness 75 mm × 3 mm, 99.9%
7440-58-6
Hafnium, thermal spray grade, -325 mesh powder, 99%
409-21-2
Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.