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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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Right angle prism, 16 mm
Substrate Glass Wafers (100 mm x 100 mm x 0.2 mm)
Silicon wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 100 nm SiO2 layer on Si (100)]
FTO Coated Glass Substrates, dimensions 50 mm x 50 mm, thick 2.2mm
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