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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Penta Prism, Thickness 50 mm
Quartz substrates (Dimension: ~ 3” × 1” × 1.1 mm)
Plano Convex Spherical Lens, Dia 25.4mm, Focal Length 50mm, AR @ 976 nm
7440-21-3
Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
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