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Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm

Code: GAS 135

Synonyms: GaAs substrate


Epi-ready

GaAs

9001 / 9002

144.64

Box
18%

Epi-ready

GaAs

9001 / 9002

144.64

Box

18%
PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR
Packings
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Properties
<111>

±0.5 °

2” (50.8 mm)

< 350 micron

± 1%

Front side polished

5 Å on front surface or better

Undoped

5 x 105 or less

≥ 1x107 ohm-cm

Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Application

Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR