Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm
: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
: Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
Properties
: 5 Å on front surface or better
Safety Information
RIDADR UN 1557 6.1 / PGII
WGK Germany 3
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1 pc
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207099.00
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10 pc
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POR
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Custom size
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POR
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