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Gallium arsenide (GaAs substrate), <100>, (undoped, 10 x 10 x 0.5 mm)

Code: GSC 111

Synonyms: GaAs substrate


GaAs

9001 / 9002

144.64

Box
18%

GaAs

9001 / 9002

144.64

Box

18%
PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR
Packings
Enquire
Properties
<100>

± 0.5°

10 mm x 10 mm

± 1%

0.5 mm ( 500 μm)

± 25 μm

Undoped

Single sides polished

< 0.5 nm

Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Application

Gallium arsenide (GaAs substrate), <100>, (undoped, 10 x 10 x 0.5 mm) - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR