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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
7440-21-3
Silicon wafer (double side polished), <100>, Intrinsic, dia x thickness 150 mm x 625 µm
Glass wafers, diam. × thickness 3 in × 300 μm
Half wave plate (Diameter: 12.7mm, Coating: AR/ AR, R<0.25%@633nm)
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