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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Barium fluoride window diam. x thick 44.45 mm x 3.5 mm
Penta Prism, Thickness 50 mm
Plano Convex Spherical Lens, Focal Length : 100mm
Calcium fluoride substrates, 25 mm x 15 mm x 1.5 mm
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