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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
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Plano Convex Lens, Dia 25 mm, Focal Length 30 mm
Potassium Bromide Window, (42mm Dia. x 2mm Thick)
7440-21-3
Silicon window, 199 mm dia, 12 mm thick
Fused silica wafers dia 100 mm thick 0.5 mm
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