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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Quartz substrate, thickness 1.0 mm, size 10 × 10 mm
7440-21-3
Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm
Laser Grade Mirror, 50.8 mm Dia (Reflectivity 100%)
Plano Convex Lens, Dia 50.8 mm, Focal Length 250 mm
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