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M 8227 (OTTO) Molybdenum sputtering target, diam. x thickness 3 inch x 2.5 mm, 99.95% Cas 7439-98-7 - used in electronic and semiconductor application.
WGK Germany 3
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
409-21-2
Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.5 mm
7440-21-3
Silicon wafer (single substrase), <100>, p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm
80-10-4
Dichlorodiphenylsilane, 97%
1345-04-6
Antimony(III) sulphide, black, 95%
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.