Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm
: SiC Substrates, Silicon Carbide single crystal substrate
: Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
: SSC 064 (OTTO) Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm - used in power applications including diodes, transistors and LED.
Properties
: Double side optically polished
: Off axis 4.0° ± 0.5° toward <1120>
: C-face and Si- face marked distinctly
Safety Information
Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves
WGK Germany 3
| Packings | Price (INR) |
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1 pc
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765099.00
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10 pc
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POR
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