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Specification Sheet

Indium phosphide (single crystal substrate), (100) ± 0.5o

: Inp single crystal substrate

: IAW 074

: Epi-ready

: InP

: 145.79

: Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

: Indium phosphide is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.


Properties

: (100) ± 0.5o n-type doping

: 0.01 - 0.1 ohm.cm

: 2” (50.8 mm ± 0.4mm)

: 300 – 400 micron

: One side polished

: Ra < 15 Å


Safety Information

RIDADR NONH for all modes of transport
WGK Germany 3


PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR