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Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth.
Gallium oxide single crystals has been studied in the use of lasers, phosphors, and luminescent materials.
WGK Germany 1
Certificate Of Analysis
(For eg. B 1615-0108)
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FeCo alloy sputtering target diam. x thickness 2 inch × 1.5 mm, ≥99.9%
12068-69-8
Bismuth selenide doped with chromium, sputtering target, diam. × thickness 1 inch × 3 mm, 99.95% (5 wt% Cr)
106495-57-2
Cerium magnesium aluminate, terbium doped, 99%
70131-67-8
Poly(dimethylsiloxane), hydroxy terminated average Mn ~110,000, viscosity ~50,000 cSt
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