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Silicon wafer (single substrase), <100>, p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm

Code: SCS 036

Si

90019090

28.09

Container
18%

Si

90019090

28.09

Container

18%
PackingsPrice (INR)
1 pc 4869.00
10 pc 43209.00
Custom size POR
Packings
Enquire
Properties
p-Type

<100>

±0.1 º or better

2 Inch

±0.1 %

0.3 mm

±0.1 %

Boron as dopant

2355 °C

~1-5 Ωcm

Description

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

Application

sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics. Sapphire substrates for photoelectronic applications, including the high brightness LED market.

Safety Information

WGK Germany 2


RTECS VW0400000

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
Technical Services

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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 4869.00
10 pc 43209.00
Custom size POR