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Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 108 (OTTO) Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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7440-03-1
Niobium, sputtering target, 99.95% (L x W x Thick 14 x 1 x 2 mm)
Hastealloy X, powder
FeCo alloy sputtering target diam. x thickness 2 inch × 1.5 mm, ≥99.9%
10043-35-3
Boric acid, 99.999%
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.