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Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth.
Gallium oxide single crystals has been studied in the use of lasers, phosphors, and luminescent materials.
WGK Germany 1
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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7446-07-3
Tellurium oxide, 99.5%
12068-69-8
Bismuth selenide doped with iron, sputtering target, diam. × thickness 3 inch × 3 mm, 99.95% (5 wt% Fe)
Silica Microparticles [Mean Diameter (µm) 0.977]
50926-11-9
Indium tin oxide coated, glass substrate, Size: 10 x 10 x 1 mm
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