Silicon wafer (single substrase), <111>, p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics. Sapphire substrates for photoelectronic applications, including the high brightness LED market.