Enquiry

Gallium(III) nitride, 99.99%

Code: G 1670

Synonyms: Gallium nitride, Gallium trinitride

GaN

28500020

83.73

Bottle / Drum
18%
GaN

28500020

83.73

Bottle / Drum

18%
PackingsPrice (INR)
10 gm 59004.00
50 gm 179109.00
100 gm POR
1 kg POR
Packings
Enquire
Properties
99.99%+

Powder

Yellow

800 °C(lit.)

6.15 g/cm3

Description

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices.

Application

G 1670 (OTTO) Gallium(III) nitride, 99.99% Cas 25617-97-4 -used to read Blu-ray Discs. When doped with a suitable transition metal such as mangallium nitrideese, Gallium nitride is a promising spintronics material (magnetic semiconductors).

Safety Information
Hazard Symbols
 
  • Exclamation Mark

Hazard statements H317


Precautionary statements P280
Personal Protective Equipment Eyeshields, Faceshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
Safety Statements 22-24/25
WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
Technical Services

Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.

Enquire Now

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
10 gm 59004.00
50 gm 179109.00
100 gm POR
1 kg POR